PDTC143XQC-QZ
Nexperia USA Inc.
Nexperia USA Inc.
PDTC143XQC-Q/SOT8009/DFN1412D-
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your projects with the PDTC143XQC-QZ by Nexperia USA Inc., a top-tier choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer outstanding durability and precision, ensuring optimal performance in any circuit. Key features include high current gain, low saturation voltage, and thermal stability. Ideal for use in power management, signal processing, and automation systems. Nexperia USA Inc. guarantees top-notch quality and performance. Reach out now to learn more or request a sample!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 230 MHz
- Power - Max: 360 mW
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1412D-3
Related Products
onsemi
MUN5114T1G
Diodes Incorporated
DDTC143FCA-7-F
Toshiba Semiconductor and Storage
RN1103,LF(CT
Infineon Technologies
BCR198E6433HTMA1
Rohm Semiconductor
DTC043EMT2L
Diodes Incorporated
DDTC143XE-7
onsemi
DTC113EM3T5G
Rohm Semiconductor
DTC115EUBTL
Infineon Technologies
BCR166E6433HTMA1
onsemi