PHB18NQ10T,118
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 100V 18A D2PAK
$0.40
Available to order
Reference Price (USD)
4,800+
$0.34036
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with PHB18NQ10T,118 by NXP USA Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, PHB18NQ10T,118 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Fairchild Semiconductor
HUFA75329G3
Rohm Semiconductor
SCT3080KLGC11
Toshiba Semiconductor and Storage
TK16A60W,S4VX
Vishay Siliconix
SI3443BDV-T1-BE3
IXYS
IXTA140P05T
Infineon Technologies
IRFB4410ZGPBF
Nexperia USA Inc.
PMPB07R3VPX
onsemi
MGSF3441VT1
onsemi
NTD4904N-35G
IXYS