PJD90N03_L2_00001
Panjit International Inc.
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
$1.10
Available to order
Reference Price (USD)
1+
$1.10000
500+
$1.089
1000+
$1.078
1500+
$1.067
2000+
$1.056
2500+
$1.045
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with PJD90N03_L2_00001, a high-quality Transistors - FETs, MOSFETs - Single from Panjit International Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, PJD90N03_L2_00001 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPP60R360CFD7XKSA1
STMicroelectronics
STB5N80K5
Infineon Technologies
IRF3205STRLPBF
Fairchild Semiconductor
FDS6689S
onsemi
NTD4855N-35G
Nexperia USA Inc.
PSMN2R2-40BS,118
Infineon Technologies
IPDD60R050G7XTMA1
onsemi
NCV8440ASTT1G
Vishay Siliconix
SI2307CDS-T1-BE3
IXYS