SI2307CDS-T1-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 2.7A/3.5A SOT23
$0.53
Available to order
Reference Price (USD)
1+
$0.53000
500+
$0.5247
1000+
$0.5194
1500+
$0.5141
2000+
$0.5088
2500+
$0.5035
Exquisite packaging
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SI2307CDS-T1-BE3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SI2307CDS-T1-BE3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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