PJF13NA50_T0_00001
Panjit International Inc.
Panjit International Inc.
500V N-CHANNEL MOSFET
$1.86
Available to order
Reference Price (USD)
1+
$1.86000
500+
$1.8414
1000+
$1.8228
1500+
$1.8042
2000+
$1.7856
2500+
$1.767
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance PJF13NA50_T0_00001 from Panjit International Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, PJF13NA50_T0_00001 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 520mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1435 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 51W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
IPW65R420CFDFKSA1
Nexperia USA Inc.
BUK9Y65-100E,115
Infineon Technologies
IRFS3307ZTRRPBF
Infineon Technologies
IPP80R900P7XKSA1
Microchip Technology
LND150K1-G
Nexperia USA Inc.
PSMN016-100YS,115
Panjit International Inc.
PJQ5426_R2_00001
Infineon Technologies
BSZ058N03MSGATMA1
Infineon Technologies
IRF1018EPBF
Vishay Siliconix