PJF60R620E_T0_00001
Panjit International Inc.
Panjit International Inc.
600V N-CHANNEL SUPER JUNCTION MO
$1.73
Available to order
Reference Price (USD)
1+
$1.73000
500+
$1.7127
1000+
$1.6954
1500+
$1.6781
2000+
$1.6608
2500+
$1.6435
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with PJF60R620E_T0_00001, a reliable Transistors - FETs, MOSFETs - Single by Panjit International Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PJF60R620E_T0_00001 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.04W (Ta), 45W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
FDB9406-F085
Vishay Siliconix
IRF9540STRLPBF
Rectron USA
RM80N80T2
Alpha & Omega Semiconductor Inc.
AOTF6N90
Alpha & Omega Semiconductor Inc.
AOD380A60
onsemi
NTS4409NT1G
Infineon Technologies
AUIRFS3004TRL
Infineon Technologies
IRFP3206PBF
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL2302B-F2-0000HF
onsemi