YJL2302B-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 20V 3A SOT-23-3L
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of YJL2302B-F2-0000HF, a premium Transistors - FETs, MOSFETs - Single from Yangzhou Yangjie Electronic Technology Co.,Ltd. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, YJL2302B-F2-0000HF is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
FDPF8D5N10C
Micro Commercial Co
SI3134KL3-TP
Diodes Incorporated
DMN67D7L-13
onsemi
FCP290N80
IXYS
IXFK120N25P
Infineon Technologies
AUIRFR120ZTRL
Microchip Technology
APT20M20B2FLLG
Renesas Electronics America Inc
UPA2701GR-E1-AT
STMicroelectronics
STW21N90K5
Infineon Technologies