PJQ4401P_R2_00001
Panjit International Inc.
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with PJQ4401P_R2_00001 by Panjit International Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, PJQ4401P_R2_00001 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
IPP50R399CPXKSA1
onsemi
3LP01M-TL-H
onsemi
FDMS3662
IXYS
IXTT11P50
onsemi
NTD20N03L27-001
Vishay Siliconix
IRF540STRRPBF
Vishay Siliconix
SIRA64DP-T1-RE3
onsemi
NVMYS7D3N04CLTWG
STMicroelectronics
STD15N60M2-EP
onsemi