PJT7600_R1_00001
Panjit International Inc.
Panjit International Inc.
20V COMPLEMENTARY ENHANCEMENT MO
$0.52
Available to order
Reference Price (USD)
1+
$0.52000
500+
$0.5148
1000+
$0.5096
1500+
$0.5044
2000+
$0.4992
2500+
$0.494
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic circuits with Panjit International Inc. s PJT7600_R1_00001, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how PJT7600_R1_00001 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
- Power - Max: 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Microchip Technology
MSCSM70TLM10C3AG
Sanyo
2SJ653-CB11
Microchip Technology
APTC80H15T1G
Fairchild Semiconductor
FCP11N65
Diodes Incorporated
DMN3016LDN-13
Microchip Technology
APTC60DHM24T3G
Renesas Electronics America Inc
FS50KM-2-AX#204
onsemi
NTTFS5C471NLTAG
IXYS
MMIX2F60N50P3
Sanyo