PJT7802_R1_00001
Panjit International Inc.
Panjit International Inc.
20V N-CHANNEL ENHANCEMENT MODE M
$0.53
Available to order
Reference Price (USD)
1+
$0.53000
500+
$0.5247
1000+
$0.5194
1500+
$0.5141
2000+
$0.5088
2500+
$0.5035
Exquisite packaging
Discount
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Discover high-performance PJT7802_R1_00001 from Panjit International Inc., a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Panjit International Inc. s PJT7802_R1_00001 enhance your projects with superior quality and performance.
Specifications
- Product Status: Not For New Designs
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
- Power - Max: 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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