PMBFJ108,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
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The PMBFJ108,215 series represents NXP USA Inc.'s commitment to excellence in JFET technology, offering depletion-mode transistors with industry-leading Yfs stability. Designed for long-term reliability in telecom filters and voltage-controlled resistors, these devices maintain parameters within 5% over 10,000 hours. Features include gold-bonded leads and hermetically sealed packages for aerospace applications. Download the reliability report or request cross-reference assistance our technical team provides full lifecycle support.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Resistance - RDS(On): 8 Ohms
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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