PMBFJ308,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
$0.00
Available to order
Reference Price (USD)
1+
$0.51000
10+
$0.43300
100+
$0.33140
500+
$0.24984
1,000+
$0.19884
Exquisite packaging
Discount
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Engineers trust NXP USA Inc.'s PMBFJ308,215 JFET transistors for critical amplification stages requiring exceptional dynamic range. The proprietary fabrication process delivers tight IDSS matching between units, simplifying parallel configurations in mixer consoles and transducer interfaces. With TO-92 and SMD packaging options available, these components adapt to space-constrained PCB layouts. Visit our product page for application notes or contact sales to discuss volume discounts on these industry-standard semiconductors.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): 50 Ohms
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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