PMCM4401VPEZ
NXP Semiconductors
NXP Semiconductors
NEXPERIA PMCM4401VPE - 12V, P-CH
$0.08
Available to order
Reference Price (USD)
9,000+
$0.13939
18,000+
$0.13155
27,000+
$0.12214
63,000+
$0.11822
Exquisite packaging
Discount
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Upgrade your electronic designs with PMCM4401VPEZ by NXP Semiconductors, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, PMCM4401VPEZ ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-WLCSP (0.78x0.78)
- Package / Case: 4-XFBGA, WLCSP
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