STD16N65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 11A DPAK
$2.60
Available to order
Reference Price (USD)
2,500+
$1.34000
5,000+
$1.29600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STD16N65M2 by STMicroelectronics is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, STD16N65M2 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPL60R1K5C6SATMA1
onsemi
NTMJS1D5N04CLTWG
Alpha & Omega Semiconductor Inc.
AOT380A60L
STMicroelectronics
STP75NF75
Infineon Technologies
IRF8707TRPBF
Rohm Semiconductor
RD3S075CNTL1
Infineon Technologies
IPS70R2K0CEE8211AKMA1
Infineon Technologies
IRF5305STRLPBF
Fairchild Semiconductor
IRFW720BTM
Infineon Technologies