PMDT290UCE,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N/P-CH 20V SOT666
$0.44
Available to order
Reference Price (USD)
4,000+
$0.12415
8,000+
$0.11662
12,000+
$0.10910
28,000+
$0.10007
100,000+
$0.09576
Exquisite packaging
Discount
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The PMDT290UCE,115 by Nexperia USA Inc. is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Nexperia USA Inc. s PMDT290UCE,115 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Not For New Designs
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA
- Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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