PMDXB550UNEZ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.59A 6DFN
$0.44
Available to order
Reference Price (USD)
5,000+
$0.12825
10,000+
$0.12103
25,000+
$0.11237
50,000+
$0.10876
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic circuits with Nexperia USA Inc. s PMDXB550UNEZ, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how PMDXB550UNEZ can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 590mA
- Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
- Power - Max: 285mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
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