PMFPB8040XP,115
NXP USA Inc.
NXP USA Inc.
MOSFET P-CH 20V 2.7A HUSON6
$0.18
Available to order
Reference Price (USD)
1+
$0.18000
500+
$0.1782
1000+
$0.1764
1500+
$0.1746
2000+
$0.1728
2500+
$0.171
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose PMFPB8040XP,115 by NXP USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with PMFPB8040XP,115 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-HUSON (2x2)
- Package / Case: 6-UFDFN Exposed Pad
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