SCTW35N65G2VAG
STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 45A HIP247
$20.40
Available to order
Reference Price (USD)
1+
$20.40000
500+
$20.196
1000+
$19.992
1500+
$19.788
2000+
$19.584
2500+
$19.38
Exquisite packaging
Discount
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Upgrade your electronic designs with SCTW35N65G2VAG by STMicroelectronics, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SCTW35N65G2VAG ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 240W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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