MSCSM120HM31CT3AG
Microchip Technology

Microchip Technology
PM-MOSFET-SIC-SBD~-SP3F
$285.97
Available to order
Reference Price (USD)
1+
$285.97000
500+
$283.1103
1000+
$280.2506
1500+
$277.3909
2000+
$274.5312
2500+
$271.6715
Exquisite packaging
Discount
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The MSCSM120HM31CT3AG from Microchip Technology is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, MSCSM120HM31CT3AG offers the reliability you need. Contact us now to discuss how we can support your project requirements with Microchip Technology s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F