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MSCSM120HM31CT3AG

Microchip Technology
MSCSM120HM31CT3AG Preview
Microchip Technology
PM-MOSFET-SIC-SBD~-SP3F
$285.97
Available to order
Reference Price (USD)
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$285.97000
500+
$283.1103
1000+
$280.2506
1500+
$277.3909
2000+
$274.5312
2500+
$271.6715
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: 4 N-Channel
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 395W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F

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