PMH400UNEH
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 900MA DFN0606-3
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose PMH400UNEH by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with PMH400UNEH inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 460mOhm @ 700mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN0606-3 (SOT8001)
- Package / Case: 3-XFDFN
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