SIHP5N80AE-GE3
Vishay Siliconix
Vishay Siliconix
E SERIES POWER MOSFET TO-220AB,
$1.59
Available to order
Reference Price (USD)
1+
$1.59000
500+
$1.5741
1000+
$1.5582
1500+
$1.5423
2000+
$1.5264
2500+
$1.5105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SIHP5N80AE-GE3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SIHP5N80AE-GE3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SISS32ADN-T1-GE3
Infineon Technologies
IPB180P04P4L02ATMA2
Toshiba Semiconductor and Storage
TPN1110ENH,L1Q
Microchip Technology
2N6661
Nexperia USA Inc.
BUK9605-30A,118
Vishay Siliconix
SISS54DN-T1-GE3
Panjit International Inc.
PJQ2407_R1_00001
Vishay Siliconix
SIHB28N60EF-T5-GE3
Infineon Technologies
IRFS3004TRLPBF
NTE Electronics, Inc