PMN45EN,135
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 5.2A 6TSOP
$0.17
Available to order
Reference Price (USD)
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$0.17000
500+
$0.1683
1000+
$0.1666
1500+
$0.1649
2000+
$0.1632
2500+
$0.1615
Exquisite packaging
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Experience the power of PMN45EN,135, a premium Transistors - FETs, MOSFETs - Single from NXP USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PMN45EN,135 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
- Vgs (Max): 20V
- Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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