PMV30UN,215
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 20V 5.7A TO236AB
$0.07
Available to order
Reference Price (USD)
1+
$0.07000
500+
$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
Exquisite packaging
Discount
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NXP USA Inc. presents PMV30UN,215, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PMV30UN,215 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23 (TO-236AB)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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