PMXB360ENEAZ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 80V 1.1A DFN1010D-3
$0.41
Available to order
Reference Price (USD)
5,000+
$0.12708
10,000+
$0.11993
25,000+
$0.11135
50,000+
$0.10777
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of PMXB360ENEAZ, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PMXB360ENEAZ is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta), 6.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010D-3
- Package / Case: 3-XDFN Exposed Pad
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