PSMN011-60MSX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 61A LFPAK33
$1.01
Available to order
Reference Price (USD)
1,500+
$0.35939
3,000+
$0.32570
7,500+
$0.30324
10,500+
$0.29201
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with PSMN011-60MSX, a high-quality Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, PSMN011-60MSX provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1368 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 91W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Related Products
Rohm Semiconductor
R6007ENX
Nexperia USA Inc.
PMV52ENEAR
Taiwan Semiconductor Corporation
TSM070NH04LCR RLG
Renesas Electronics America Inc
RJK0853DPB-00#J5
Diodes Incorporated
DMTH6010LK3Q-13
Infineon Technologies
SPI15N65C3
Infineon Technologies
IPD079N06L3GATMA1
onsemi
FCD360N65S3R0
Vishay Siliconix
IRL640SPBF
Vishay Siliconix