PSMN102-200Y,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 200V 21.5A LFPAK56
$1.62
Available to order
Reference Price (USD)
1,500+
$0.64301
3,000+
$0.60014
7,500+
$0.57013
10,500+
$0.54870
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of PSMN102-200Y,115, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PSMN102-200Y,115 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 102mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 113W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
IXYS
IXTA1R4N120P-TRL
IXYS
IXTP14N60P
Sanyo
MCH6336-TL-E
IXYS
IXTP260N055T2
STMicroelectronics
STFH18N60M2
onsemi
NTB082N65S3F
Panjit International Inc.
PJMF130N65EC_T0_00001
Nexperia USA Inc.
BUK753R1-40E,127
Vishay Siliconix
IRF720PBF
Infineon Technologies