PSMN1R9-40PL127
NXP USA Inc.
NXP USA Inc.
N-CHANNEL POWER MOSFET
$1.54
Available to order
Reference Price (USD)
1+
$1.54000
500+
$1.5246
1000+
$1.5092
1500+
$1.4938
2000+
$1.4784
2500+
$1.463
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with PSMN1R9-40PL127, a premium Transistors - FETs, MOSFETs - Single from NXP USA Inc.. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust PSMN1R9-40PL127 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Nexperia USA Inc.
PSMN6R1-25MLDX
Infineon Technologies
IRF7465TRPBF
Vishay Siliconix
SIHB22N65E-T1-GE3
Infineon Technologies
AUIRFS3107-7TRL
onsemi
NTMFS4C025NT3G
Infineon Technologies
ISS55EP06LMXTSA1
Fairchild Semiconductor
HUFA75309T3ST
STMicroelectronics
STP8NK100Z
Rohm Semiconductor
RS1E350GNTB
Infineon Technologies