PSMN3R3-40MSHX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 118A LFPAK33
$0.69
Available to order
Reference Price (USD)
1+
$0.69465
500+
$0.6877035
1000+
$0.680757
1500+
$0.6738105
2000+
$0.666864
2500+
$0.6599175
Exquisite packaging
Discount
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Discover PSMN3R3-40MSHX, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 118A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3063 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 101W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
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