PSMN4R0-30YLDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
$0.90
Available to order
Reference Price (USD)
1,500+
$0.29761
3,000+
$0.26971
7,500+
$0.25111
10,500+
$0.24181
37,500+
$0.23674
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
PSMN4R0-30YLDX by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PSMN4R0-30YLDX ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 64W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Vishay Siliconix
SI4626ADY-T1-GE3
onsemi
FDMS8018
NXP USA Inc.
PMN25EN,115
Nexperia USA Inc.
BUK7D36-60EX
Texas Instruments
CSD19532KTTT
Infineon Technologies
SPA15N60C3XKSA1
Toshiba Semiconductor and Storage
SSM3K337R,LF
Wolfspeed, Inc.
C3M0040120J1
STMicroelectronics
STP6N60M2
Taiwan Semiconductor Corporation