PSMN7R8-120ESQ
NXP USA Inc.
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR, 7
$1.00
Available to order
Reference Price (USD)
5,000+
$1.14400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NXP USA Inc. presents PSMN7R8-120ESQ, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PSMN7R8-120ESQ delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9473 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 349W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Nexperia USA Inc.
PMV65XPVL
onsemi
FCP110N65F
Infineon Technologies
BSC883N03LSGATMA1
Texas Instruments
CSD18501Q5A
Infineon Technologies
IPA60R125P6XKSA1
STMicroelectronics
STF3NK80Z
Infineon Technologies
IRFR3709ZTRPBF
STMicroelectronics
STL8NH3LL
Texas Instruments
CSD18503Q5AT
onsemi