PUMD30,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 6TSSOP
$0.05
Available to order
Reference Price (USD)
3,000+
$0.05727
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality PUMD30,115 Bipolar Junction Transistor (BJT) Arrays from Nexperia USA Inc., designed for reliable performance in various electronic applications. These pre-biased transistor arrays offer excellent switching and amplification capabilities, making them ideal for compact circuit designs. Common applications include signal processing, driver circuits, and load switching in consumer electronics, industrial controls, and automotive systems. Features include matched pairs for consistent performance, low saturation voltage, and thermal stability. Upgrade your electronic projects with Nexperia USA Inc.'s precision-engineered components. Contact us today for pricing and availability submit your inquiry now!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
Toshiba Semiconductor and Storage
RN4983FE,LF(CT
onsemi
NSVBC114EPDXV6T1G
Infineon Technologies
BCR22PNH6433XTMA1
Toshiba Semiconductor and Storage
RN2906FE,LXHF(CT
Toshiba Semiconductor and Storage
RN4902FE,LF(CT
onsemi
NSVUMC5NT2G
onsemi
NSVBC143TPDXV6T1G
Toshiba Semiconductor and Storage
RN4987,LXHF(CT
onsemi
EMG2DXV5T5
Toshiba Semiconductor and Storage