PUMD48,125
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP 50V 6TSSOP
$0.04
Available to order
Reference Price (USD)
1+
$0.04494
500+
$0.0444906
1000+
$0.0440412
1500+
$0.0435918
2000+
$0.0431424
2500+
$0.042693
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic designs with Nexperia USA Inc.'s PUMD48,125 BJT Array solution, offering pre-configured biasing for immediate implementation. These transistor arrays excel in switching and linear applications where space and efficiency are critical. The product series demonstrates superior characteristics: thermal shutdown protection, high-frequency response, and ESD protection for durable performance. Commonly deployed in battery-powered devices, motor controllers, and audio amplifiers across multiple industries. Nexperia USA Inc. combines decades of semiconductor experience with cutting-edge manufacturing techniques. Don't compromise on quality request samples or volume pricing for PUMD48,125 through our quick inquiry system!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms, 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
onsemi
NSBA143EDP6T5G
onsemi
NSVBC124XDXV6T1G
Diodes Incorporated
DDC144TH-7-F
onsemi
NSBA114TDXV6T5G
Toshiba Semiconductor and Storage
RN2901,LXHF(CT
Toshiba Semiconductor and Storage
RN4909,LF(CT
onsemi
NSVMUN5215DW1T1G
onsemi
NSVIMD10AMT1G
Nexperia USA Inc.
PIMC31F
onsemi