PXP011-20QXJ
Nexperia USA Inc.
Nexperia USA Inc.
PXP011-20QX/SOT8002/MLPAK33
$0.70
Available to order
Reference Price (USD)
1+
$0.70000
500+
$0.693
1000+
$0.686
1500+
$0.679
2000+
$0.672
2500+
$0.665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Nexperia USA Inc. presents PXP011-20QXJ, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PXP011-20QXJ delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MLPAK33
- Package / Case: 8-PowerVDFN
Related Products
NXP USA Inc.
BUK9E2R3-40E,127
Infineon Technologies
BUZ111SL-E3045A
Infineon Technologies
IPD65R660CFDATMA2
Fairchild Semiconductor
FQPF9N50T
Infineon Technologies
IPL65R650C6SATMA1
Vishay Siliconix
SI2301BDS-T1-GE3
NXP USA Inc.
PHB110NQ08T,118
onsemi
FSS145-TL-E
onsemi
NTB75N03RT4
Vishay Siliconix