R6020JNZ4C13
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 20A TO247G
$8.85
Available to order
Reference Price (USD)
1+
$8.85000
500+
$8.7615
1000+
$8.673
1500+
$8.5845
2000+
$8.496
2500+
$8.4075
Exquisite packaging
Discount
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Rohm Semiconductor presents R6020JNZ4C13, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, R6020JNZ4C13 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id: 7V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 252W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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