R6524KNX3C16
Rohm Semiconductor
Rohm Semiconductor
650V 24A, TO-220AB, HIGH-SPEED S
$4.77
Available to order
Reference Price (USD)
1+
$4.77000
500+
$4.7223
1000+
$4.6746
1500+
$4.6269
2000+
$4.5792
2500+
$4.5315
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose R6524KNX3C16 by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with R6524KNX3C16 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 253W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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