PJQ4468AP_R2_00001
Panjit International Inc.
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
$0.92
Available to order
Reference Price (USD)
1+
$0.92000
500+
$0.9108
1000+
$0.9016
1500+
$0.8924
2000+
$0.8832
2500+
$0.874
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of PJQ4468AP_R2_00001, a premium Transistors - FETs, MOSFETs - Single from Panjit International Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PJQ4468AP_R2_00001 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 24W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
Related Products
Nexperia USA Inc.
BUK964R8-60E,118
onsemi
FDMS8026S
Infineon Technologies
BSS83PH6327XTSA1
Diodes Incorporated
DMT6012LPSW-13
STMicroelectronics
STW75N60M6
Rohm Semiconductor
RQ7E110AJTCR
onsemi
NTD78N03R-035
Diodes Incorporated
DMG302PU-7
onsemi
NVMFS5C430NLAFT3G
Alpha & Omega Semiconductor Inc.