RGS80TS65DHRC11
Rohm Semiconductor
Rohm Semiconductor
8US SHORT-CIRCUIT TOLERANCE, 650
$8.43
Available to order
Reference Price (USD)
1+
$8.43000
500+
$8.3457
1000+
$8.2614
1500+
$8.1771
2000+
$8.0928
2500+
$8.0085
Exquisite packaging
Discount
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The RGS80TS65DHRC11 Single IGBT from Rohm Semiconductor redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Rohm Semiconductor stands behind every RGS80TS65DHRC11 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 73 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 272 W
- Switching Energy: 1.05mJ (on), 1.03mJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 37ns/112ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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