RGT8NS65DGC9
Rohm Semiconductor
Rohm Semiconductor
IGBT
$2.21
Available to order
Reference Price (USD)
1+
$2.21000
500+
$2.1879
1000+
$2.1658
1500+
$2.1437
2000+
$2.1216
2500+
$2.0995
Exquisite packaging
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The RGT8NS65DGC9 Single IGBT by Rohm Semiconductor sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Rohm Semiconductor for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 65 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 13.5 nC
- Td (on/off) @ 25°C: 17ns/69ns
- Test Condition: 400V, 4A, 50Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262
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