AIKW40N65DF5XKSA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 650V TO247-3
$8.56
Available to order
Reference Price (USD)
1+
$7.64000
10+
$6.95500
240+
$5.85063
720+
$5.16443
1,200+
$4.56771
Exquisite packaging
Discount
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The AIKW40N65DF5XKSA1 Single IGBT from Infineon Technologies delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Infineon Technologies's commitment to innovation ensures AIKW40N65DF5XKSA1 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 74 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 250 W
- Switching Energy: 350µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 19ns/165ns
- Test Condition: 400V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
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