RGTH00TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 85A 277W TO-247N
$5.83
Available to order
Reference Price (USD)
1+
$4.58000
10+
$4.11700
30+
$3.89267
120+
$3.37350
270+
$3.20052
510+
$2.87180
1,020+
$2.42200
Exquisite packaging
Discount
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The RGTH00TS65DGC11 Single IGBT from Rohm Semiconductor redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Rohm Semiconductor stands behind every RGTH00TS65DGC11 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 277 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 94 nC
- Td (on/off) @ 25°C: 39ns/143ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 54 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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