RGTH60TS65GC11
Rohm Semiconductor

Rohm Semiconductor
IGBT 650V 58A 197W TO-247N
$3.72
Available to order
Reference Price (USD)
1+
$2.93000
10+
$2.62800
30+
$2.48400
120+
$2.15283
270+
$2.04241
510+
$1.83265
1,020+
$1.54560
Exquisite packaging
Discount
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Enhance your electronic designs with RGTH60TS65GC11 Single IGBTs from Rohm Semiconductor, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Rohm Semiconductor's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 58 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 197 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 58 nC
- Td (on/off) @ 25°C: 27ns/105ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N