RGTVX6TS65GC11
Rohm Semiconductor
Rohm Semiconductor
650V 80A FIELD STOP TRENCH IGBT
$7.10
Available to order
Reference Price (USD)
1+
$6.39000
10+
$5.73600
25+
$5.42240
100+
$4.69950
450+
$4.45851
900+
$4.00060
1,350+
$3.37400
Exquisite packaging
Discount
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The RGTVX6TS65GC11 Single IGBT by Rohm Semiconductor sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Rohm Semiconductor for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 144 A
- Current - Collector Pulsed (Icm): 320 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
- Power - Max: 404 W
- Switching Energy: 2.65mJ (on), 1.8mJ (off)
- Input Type: Standard
- Gate Charge: 171 nC
- Td (on/off) @ 25°C: 45ns/201ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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