RGW60TK65GVC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT
$5.90
Available to order
Reference Price (USD)
1+
$4.64000
10+
$4.16500
25+
$3.93760
100+
$3.41250
450+
$3.23751
900+
$2.90500
1,350+
$2.45000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize power control with RGW60TK65GVC11 Single IGBTs from Rohm Semiconductor, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Rohm Semiconductor ensures RGW60TK65GVC11 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 33 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 72 W
- Switching Energy: 480µJ (on), 490µJ (off)
- Input Type: Standard
- Gate Charge: 84 nC
- Td (on/off) @ 25°C: 37ns/114ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
Related Products
Harris Corporation
IGTP10N40
onsemi
NGTB50N60S1WG
Infineon Technologies
IKW40N65RH5XKSA1
onsemi
NGTB15N120FL2WG
onsemi
FGH40N60SFTU
Harris Corporation
IGTM10N50A
IXYS
IXGT16N170A
IXYS
IXYT85N120A4HV
Microchip Technology
APT75GN60SDQ2G
onsemi