RGW60TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT
$5.92
Available to order
Reference Price (USD)
1+
$4.77000
10+
$4.28400
25+
$4.05000
100+
$3.51000
450+
$3.33000
900+
$2.98800
1,350+
$2.52000
Exquisite packaging
Discount
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Optimize power control with RGW60TS65DGC11 Single IGBTs from Rohm Semiconductor, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Rohm Semiconductor ensures RGW60TS65DGC11 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 178 W
- Switching Energy: 480µJ (on), 490µJ (off)
- Input Type: Standard
- Gate Charge: 84 nC
- Td (on/off) @ 25°C: 37ns/114ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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