IKW75N65EL5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 75A FAST DIODE TO247-3
$9.99
Available to order
Reference Price (USD)
1+
$10.10000
10+
$9.19800
240+
$7.73792
720+
$6.83035
1,200+
$6.04115
Exquisite packaging
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The IKW75N65EL5XKSA1 Single IGBT by Infineon Technologies sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Infineon Technologies for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
- Power - Max: 536 W
- Switching Energy: 1.61mJ (on), 3.2mJ (off)
- Input Type: Standard
- Gate Charge: 436 nC
- Td (on/off) @ 25°C: 40ns/275ns
- Test Condition: 400V, 75A, 4Ohm, 15V
- Reverse Recovery Time (trr): 114 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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