RGW80TK65DGVC11
Rohm Semiconductor
Rohm Semiconductor
650V 40A FIELD STOP TRENCH IGBT
$6.57
Available to order
Reference Price (USD)
1+
$5.75000
10+
$5.16500
25+
$4.88240
100+
$4.23150
450+
$4.01451
900+
$3.60220
1,350+
$3.03800
Exquisite packaging
Discount
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Discover high-performance RGW80TK65DGVC11 Single IGBTs from Rohm Semiconductor, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, RGW80TK65DGVC11 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 39 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 81 W
- Switching Energy: 760µJ (on), 720µJ (off)
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 44ns/143ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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