STGB40H65FB
STMicroelectronics
STMicroelectronics
IGBT BIPO 650V 40A D2PAK
$3.85
Available to order
Reference Price (USD)
1,000+
$1.99200
2,000+
$1.90800
Exquisite packaging
Discount
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Choose STGB40H65FB Single IGBTs by STMicroelectronics for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. STMicroelectronics's reputation for quality makes STGB40H65FB a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 283 W
- Switching Energy: 498µJ (on), 363µJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 40ns/142ns
- Test Condition: 400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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