RGWS80TS65GC13
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$5.60
Available to order
Reference Price (USD)
1+
$5.60000
500+
$5.544
1000+
$5.488
1500+
$5.432
2000+
$5.376
2500+
$5.32
Exquisite packaging
Discount
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Enhance your electronic designs with RGWS80TS65GC13 Single IGBTs from Rohm Semiconductor, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Rohm Semiconductor's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 71 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 202 W
- Switching Energy: 700µJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 83 nC
- Td (on/off) @ 25°C: 40ns/114ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
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