RGWSX2TS65GC13
Rohm Semiconductor

Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.84
Available to order
Reference Price (USD)
1+
$6.84000
500+
$6.7716
1000+
$6.7032
1500+
$6.6348
2000+
$6.5664
2500+
$6.498
Exquisite packaging
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The RGWSX2TS65GC13 Single IGBT by Rohm Semiconductor sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Rohm Semiconductor for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 104 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 288 W
- Switching Energy: 1.43mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 140 nC
- Td (on/off) @ 25°C: 55ns/180ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G