STGWA40IH65DF
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V 40
$3.40
Available to order
Reference Price (USD)
1+
$4.17000
10+
$3.76500
100+
$3.13250
600+
$2.70620
1,200+
$2.32400
3,000+
$2.22600
Exquisite packaging
Discount
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Discover high-performance STGWA40IH65DF Single IGBTs from STMicroelectronics, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, STGWA40IH65DF ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 238 W
- Switching Energy: 190µJ (off)
- Input Type: Standard
- Gate Charge: 114 nC
- Td (on/off) @ 25°C: -/210ns
- Test Condition: 400V, 40A, 22Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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